Fairchild’s 4th generation 650 V and 1200 V IGBT devices now offer lower switching loss by 30% for designing highly efficient and reliable industrial and automotive systems. Engineered by various process technologies, Fairchild can deliver state-of-the-art power performance without sacrificing ruggedness and reliability. Test results of several applications using the contemporary approach will be presented by Fairchild at the PCIM Europe 2015.

“Manufacturers are extremely interested in more advanced IGBTs as any reduction in an IGBT’s switching loss will enable them to improve the efficiency of their products,” said Senior IHS Analyst Victoria Fodale. “Minimizing power losses is naturally key to attaining the highest levels of efficiency in a range of applications from electric vehicles and solar power systems, to highly-efficient HVAC applications and industrial inverters.”

Fairchild is applying an advanced high-density pitch, self-balancing cell build using a novel self-aligned contact technology for extremely high current densities and very favorable dynamic switching features over the whole temperature range from -40º C to 175º C. The new design enables 4th generation IGBTs with excellent low saturation voltage (Vce(sat) = ~ 1.65 V) and low switching loss (Eoff = 5 µJ/A) trade off characteristics for customers to achieve higher system efficiency. Along with the new generation, Fairchild will also make available a powerful design and simulation infrastructure package calibrated for all low and high-voltage power devices.

“Fairchild’s new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure,” said Fairchild Fellow Thomas Neyer. “These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs.”